Magnetic recording medium and magnetic recording medium driving apparatus

ABSTRACT

A magnetic recording medium and a magnetic recording medium driving apparatus are disclosed. By providing a plurality of intermediate layers made of a CoCr alloy of which saturation magnetic flux densities are controlled within a predetermined range, the magnetic recording medium, and the magnetic recording medium driving apparatus, realize a high S/Nm and thermal stability.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a continuation-in-part of application U.S. patent application Ser. No. 10/186,207, filed on Jun. 27, 2002 now U.S. Pat. No. 6,830,807.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to a magnetic recording medium and a magnetic recording medium driving apparatus, and more particularly, to a thermally stable high density magnetic recording medium that makes low noise and a magnetic recording medium driving apparatus emptying same.

2. Description of the Related Art

Developments in information technology require an increase in recording density of magnetic recording devices used for computer peripheral storage systems. One of the important properties required of magnetic recording media is a high S/Nm ratio (a signal to media noise ratio).

It is known that the pulse width Pw50 of a readback waveform of a general horizontal magnetic recording medium is related to a coercive force Hc, a remanent magnetic flux density Br, and a magnetic layer thickness t as follows: a∝(t×Br/Hc)^(1/2), and Pw50=(2×(a+d)²+(a/2)²)^(1/2), where d is a magnetic spacing.

The pulse width at 50% amplitude Pw50 is desired to be as small as possible in order to increase the resolution of a readback signal. Accordingly, it is desirable to design a magnetic recording medium having a smaller magnetic layer thickness t and a larger coercive force Hc.

To achieve a reduction in media noise, the size of magnetic grains can be reduced and intergranular magnetic interactions can be weakened. Some methods that make magnetic grains small by adding, for example, tantalum Ta, niobium Nb, boron B, or phosphorus P, to a CoCr-based alloy are proposed.

It is further known that the addition of platinum Pt to a CoCr-based alloy, for example, increases the coercive force Hc of a magnetic layer.

Furthermore, adding Cr to the magnetic layer of a CoCr-based alloy is reported to be effective in reducing intergranular magnetic interactions in the magnetic layer. However, it is known that, if a large quantity of nonmagnetic material is added to a Co-based alloy, the in-plane orientation in the direction of the easy axis of magnetization, the hcp-C axis, is weakened.

It is reported that providing a Co-based alloy intermediate layer having a stronger in-plane orientation between the magnetic layer and an underlayer solves the problem by enhancing the in-plane orientation (as reported by S. Ohkijima et al, Digests of IEEE-Inter-Mag., AB-03, 1997, for example).

The related art in the Japanese laid-open patent application 2000-251237 discloses that the coercive force is improved by adding metal such as Pt to a CoCr-based alloy formed as an intermediate layer.

The conventional magnetic recording medium, however, still has the following two problems.

The first problem relates to an intermediate layer. The intermediate layer exhibits properties of the in-plane orientation being weakened as the quantity of nonmagnetic material increases. Accordingly, the in-plane orientation is enhanced by providing an intermediate layer made of Co-based alloy with a smaller quantity of nonmagnetic material such as Cr, Ta, Nb, B, Mn, Re, and Pt.

If the quantity of nonmagnetic material is reduced, however, a saturation magnetic flux density Bs of the intermediate layer is increased and an interfacial exchange combination between the intermediate layer and the magnetic layer is strengthened. Moreover, the magnetic layer thickness t may be kept relatively thin. A magnetocrystalline anisotropy field Hk is reduced consequently. This decrease in the magnetocrystalline anisotropy field Hk makes the magnetic recording medium thermally unstable. The high saturation magnetic flux density Bs of the intermediate layer increases intergranular interactions among magnetic grains and media noise in the transitional region.

The second problem relates to the magnetic layer. As mentioned previously, one effective approach to the reduction of the media noise is to decrease the size of the magnetic grains in the magnetic layer. However, the reduction of the magnetic grain size results in another problem, the recording destruction due to thermal instability, since the volume of magnetization per bit is also reduced. The thermal instability is controlled by increasing the quantity of Pt in the magnetic layer because the magnetocrystalline anisotropy field Hk is also increased. However, the increase in the Pt density increases the intergranular interaction, and consequently increases the media noise.

The ratio of an isolated pulse signal to a media noise (Siso/Nm) is decreased to a desired level by increasing Cr density. If Pt density is increased instead of the Cr density to increase the magnetocrystalline anisotropy field Hk, the Siso/Nm cannot be decreased enough.

FIG. 1 is a graph of the coercive force Hc of the magnetic layer of Co_(β)Cr_(α)Pt₈B₃ (α=20−25 at %, β=100−(8+3+α)) as a function of the Cr density of the magnetic layer. FIG. 1 shows that the coercive force Hc of the magnetic layer depends on the Cr density in the magnetic layer.

As the Cr density increases, the media noise is reduced. But one may notice from FIG. 1 that the coercive force Hc decreases. The decrease in the coercive force Hc is caused by the decrease in the magnetocrystalline anisotropy field Hk. This means that the magnetic recording medium becomes thermally unstable. According to the conventional technique, it is difficult to manufacture magnetic recording medium with low noise and high thermal stability.

By the way, the recording magnetic layer of a magnetic recording medium such as a hard disk (HD) is made up with CoCrPt alloy. The recording magnetic layer is formed on an intermediate layer made up with CoCr alloy including additives such as Pt. The intermediate layer increases the magnetic anisotropy of the recording magnetic layer.

The following documents describe the related art.

Japanese Laid-Open Patent Application No. 2000-251237.

Lu, et al., “Thermal Instability at 10 Gbit/in² Magnetic Recording”, IEEE Trans. Mag. Vol 30, 1994, p. 4230

J. H. Richter, “Dynamic Coercivity Effects In Thin Film Media”, IEEE Trans. Mag. Vol 34, 1997, p. 1540

If the magnetic anisotropy of the recording magnetic layer is improved, it is possible to prevent the magnetization of the recording magnetic layer from being degraded for a long time period. The magnetic recording medium can withstand the thermal instability. However, if the magnetic anisotropy is increased, a strong magnetic field is required for writing information on the magnetic recording medium. A writing head needs to support such a strong magnetic field.

SUMMARY OF THE INVENTION

Accordingly, it is a general object of the present invention to provide a novel and useful magnetic recording medium in which one or more of the problems described above are eliminated.

Another and more specific object of the present invention is, first, to provide a magnetic recording medium characterized by an intermediate layer provided between an underlayer and a magnetic layer which realizes both low noise properties and thermal stability, and secondly, to provide a magnetic recording medium characterized by a magnetic layer which realizes both low noise and thermal stability.

Yet another object of the present invention is to provide a magnetic recording medium and a magnetic recording medium driving apparatus that can prevent magnetization from being degraded for a long time period without excessively increasing the magnetic anisotropy.

In order to achieve at least one of the above objects, a magnetic recording medium according to the present invention, includes: a substrate; an underlayer on the substrate; a first intermediate layer on the underlayer; a second intermediate layer on the first intermediate layer; a third intermediate layer on the second intermediate layer; and a recording layer on the third intermediate layer, wherein the first intermediate layer is made of a cobalt based alloy containing chromium equal to or greater than about 7 at % and equal to or smaller than about 28 at %; and the second intermediate layer is made of a cobalt based alloy containing chromium equal to or greater than about 29 at %; the third intermediate layer is made of a cobalt based alloy containing chromium equal to or greater than about 29 at %; and the recording layer includes a cobalt based alloy.

By providing a plurality of intermediate layers made of a CoCr alloy of which saturation magnetic flux densities are controlled within a predetermined range, the magnetic recording medium realizes a high S/Nm and thermal stability at the same time.

In this specification, an intermediate layer is defined as a 0.5-5.0 nm thick layer formed between the recording layer and the underlayer, for the purpose of improving the in-plane orientation and crystallization. Because the coercive force Hc of the intermediate layer, if formed alone on a Cr based alloy underlayer, becomes 2000 (×1/4π kA/m) or less, the intermediate layer is not suitable as the recording layer.

Other objects, features, and advantages of the present invention will become more apparent from the following detailed description when read in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a graph of a coercive force Hc as a function of a Cr density, according to the prior art;

FIG. 2 is a schematic illustration of the lamination structure of a magnetic recording medium according to the first embodiment of the present invention;

FIG. 3 is a schematic illustration of the lamination structure of a magnetic recording medium which is not an embodiment of the present invention;

FIG. 4 is a graph of a coercive force Hc, as a function of an intermediate layer thickness, of a magnetic layer of the magnetic recording medium according to the embodiment of the present invention;

FIG. 5 is a graph of an magnetocrystalline anisotropy field Hk, as a function of the first intermediate layer thickness, of the magnetic layer of the magnetic recording medium according to the first embodiment of the present invention;

FIG. 6 is a graph of a reproduction signal decay of two magnetic recording media, one an example for comparison and one the first embodiment of the present invention;

FIG. 7 is a graph of the isolated pulse signal to media noise ratio Siso/Nm, as a function of the first intermediate layer thickness of the magnetic recording medium according to the first embodiment of the present invention;

FIG. 8 is a graph of the isolated pulse signal to media noise ratio Siso/Nm, as a function of the second intermediate layer thickness of the magnetic recording medium according to the first embodiment of the present invention;

FIG. 9 is a graph of the ratio S/Nm of a reproduction signal to media noise, as a function of the saturation magnetic flux density Bs, of the magnetic recording medium according to the first embodiment of the present invention;

FIG. 10 is a graph of saturation magnetic flux density Bs, as a function of Cr density;

FIG. 11 is a graph of the isolated pulse signal to media noise ratio Siso/Nm, as a function of Cr density, of the magnetic recording medium according to the first embodiment;

FIG. 12 is a graph of a saturation magnetic flux density Bs, as a function of Cr density, of a magnetic layer of the magnetic recording medium according to the first embodiment;

FIG. 13 is a graph of coercive force Hc of a magnetic layer, as a function of Pt density in the magnetic layer, of the first embodiment;

FIG. 14 is a graph of a coercive force Hc of the magnetic layer of a magnetic recording medium according to the first embodiment, as a function of boron B density in the magnetic layer;

FIG. 15 is a graph of an O.R. as a function of total underlayer thickness;

FIG. 16 is a schematic illustration of the lamination structure of magnetic recording medium according to the second embodiment of the present invention;

FIG. 17 is a graph of the isolated pulse signal to media noise ratio Siso/Nm, as a function of the first intermediate layer thickness of the magnetic recording medium according to the second embodiment;

FIG. 18 is a graph of the total S/N as a function of the second intermediate layer thickness of the magnetic recording medium;

FIG. 19 is a graph of the ratio S/Nm of a reproduction signal to media noise, as a function of the saturation magnetic flux density Bs, of the magnetic recording medium according to the second embodiment;

FIG. 20 is a graph showing the relationship between the Cr or Cr+M density and the saturation magnetic flux density Bs;

FIG. 21 is a schematic illustration of the lamination structure of a magnetic recording medium according to the third embodiment of the present invention;

FIG. 22 is a graph of an magnetocrystalline anisotropy field Hk measured by the torque-loss method at room temperature, as a function of Ag density in the magnetic layer;

FIG. 23 is a graph of a reproduction signal-to-media noise ratio (S/Nm) at a recording density 351 kFCI, as a function of Ag density in the magnetic layer;

FIG. 24 is a schematic sectional view of a hard disk drive according to an embodiment of the present invention;

FIG. 25 is a plan view of the hard disk drive according to an embodiment of the present invention;

FIG. 26 is a schematic diagram showing the internal structure of a hard disk drive (HDD), which is an embodiment of a magnetic recording medium driving apparatus of the present invention;

FIG. 27 is a cross section showing the structure of the magnetic disk according to an embodiment;

FIG. 28 is a schematic diagram for explaining the step of forming a first underlayer according to an embodiment;

FIG. 29 is a schematic diagram for explaining the step of forming a second underlayer according to an embodiment;

FIG. 30 is a schematic diagram for explaining the step of forming a first intermediate layer according to an embodiment;

FIG. 31 is a schematic diagram for explaining the step of forming a second intermediate layer according to an embodiment;

FIG. 32 is a schematic diagram for explaining the step of forming a third intermediate layer according to an embodiment;

FIG. 33 is a schematic diagram for explaining the step of forming a recording magnetic layer according to an embodiment;

FIG. 34 is a graph showing the relation between time period and S/Nm;

FIG. 35 is a graph showing the relation between the thickness of the third intermediate layer and a reproduction output resolution;

FIG. 36 is a graph showing the relation between the thickness of the third intermediate layer and the reproduction output resolution;

FIG. 37 is a graph showing the relation between the saturation magnetic flux density Bs of the third intermediate layer and the reproduction output resolution; and

FIG. 38 is a graph showing the relation between the density of Pt and the saturation magnetic flux density Bs.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The first through third embodiments of the present invention are now described by reference to the figures. The first and second embodiments relate to a magnetic recording medium having a laminated intermediate layer between an underlayer and a magnetic layer. The third embodiment relates to a magnetic recording medium having a magnetic layer including Ag.

FIG. 2 is a schematic illustration of the lamination structure of a magnetic recording medium 10 relative to the first embodiment of the present invention. A substrate 11 shown in FIG. 2 is, for example, a non-magnetic Al substrate which is coated with a NiP film by electroless plating and texture processing. The magnetic recording medium 10 includes, from the bottom in order, an underlayer 12 made of Cr, an underlayer 13 made of CrMo, the first intermediate layer 14 made of Co (Cr, Pt, Ta, B), the second intermediate layer 15 made of CoCr, a magnetic layer 16 made of CoCrPtB, and a carbon-based overcoat 17, laminated on the substrate 11.

The abovementioned expression Co (Cr, Pt, Ta, B) means that the first intermediate layer 14 is made of Co alloy including at least one of Cr, Pt, Ta, and B.

FIG. 3 is a schematic illustration of a lamination structure of a magnetic recording medium, as an example for comparison, which is not an embodiment of the present invention. A magnetic recording medium 100 includes, from the bottom in order, an underlayer 102 made of a Cr alloy, an underlayer 103 made of a CrMo alloy, an intermediate layer 104 made of CoCrTa, a magnetic layer 105 made of CoCrPtB, and a carbon-based overcoat 107 laminated on a substrate 101 which is formed similarly to the substrate 11 of the magnetic recording medium 10.

The two magnetic recording media described above differ in that the magnetic recording medium 10 relative to the embodiment of the present invention includes the two intermediate layers 14 and 15, whereas the magnetic recording medium 100 shown as a comparative example includes the only one intermediate layer 104.

A description of the manufacturing process of the magnetic recording medium 10 shown in FIG. 2 is now given for example. The magnetic recording medium 10 is manufactured by laminating each layer in order using the sputtering method. The air in a sputtering chamber is exhausted below 9.0×10⁻⁵ Pa before sputtering the underlayers 12 and 13, and the substrate 11 is heated up to about 210° C. After the heating, Ar gas is injected to maintain the pressure in the chamber at about 0.67 Pa. A 5 nm-thick Cr layer as the first underlayer 12, a 2 nm-thick CrMo layer as the second underlayer 13, a 2 nm-thick CoCrTa layer as the first intermediate layer 14, a 3 nm-thick CoCr layer as the second intermediate layer 15, a 15 nm CoCrPtB layer as the magnetic layer 16, and a 5 nm-thick carbon-based layer as the overcoat 17 are sputtered in order on the NiP—Al substrate in order to manufacture the magnetic recording medium 10.

The magnetic recording medium 100 described as an example for comparison is manufactured in the same manner except for making one intermediate layer 104 instead of two.

The magnetic recording medium 10 will be further described as the preferred embodiment in comparison with the magnetic recording medium 100. It is assumed, in this description of the magnetic recording medium 10, that the first intermediate layer 14 is made of Co₈₀Cr₁₈Ta₂ (hereinafter, subscript figures mean percentage of composition) and the second intermediate layer 15 is made of Co₅₈Cr₄₂, unless otherwise specified. The single intermediate layer 104 of the magnetic recording medium 100 is made of Co₈₀Cr₁₈Ta₂.

FIG. 4 is a graph of a coercive force Hc of the magnetic layer 16 of the magnetic recording medium 10 as a function of a thickness of the intermediate layer. It is obvious from FIG. 4 that the coercive force Hc of the magnetic layer 16 depends on the intermediate layer thickness.

In this measurement of the coercive force Hc of the magnetic recording medium 10, the thickness of the first intermediate layer (Co₈₀Cr₁₈Ta₂) is an independent variable, whereas the thickness of the second intermediate layer (Co₅₈Cr₄₂) is fixed at 3 nm. To measure the coercive force Hc of the magnetic layer 105 of the magnetic recording medium 100, the thickness of the single intermediate layer 104 (Co₈₀Cr₁₈Ta₂) is changed.

For both the magnetic recording media 10 and 100, the product (hereinafter, referred to as “tBr”) of the magnetic layer thickness t and a remanent magnetic flux density Br is controlled to be 5.0 nTm.

As shown in FIG. 4, the coercive force Hc of the magnetic recording medium 100 having the single intermediate layer 104 rapidly decreases as the thickness of the single intermediate layer 104 increases beyond 1 nm.

However, the coercive force Hc of the magnetic recording medium 10 having the two intermediate layers 14 and 15 is kept at a high level even if the thickness of the first intermediate layer (Co₈₀Cr₁₈Ta₂) is more than 1 nm.

The saturation magnetic flux densities Bs of the 15 nm-thick first intermediate layer (Co₈₀Cr₁₈Ta₂) and the 15 nm-thick second intermediate layer (Co₅₈Cr₄₂) measured by a Vibrating Sample Magnetometer (VSM) at room temperature are 0.6 T and about 0 T, respectively.

FIG. 5 is a graph of a magnetocrystalline anisotropy field Hk of the magnetic layer 16 of the magnetic recording medium 10 as a function of a thickness of the first intermediate layer. It is clear from FIG. 5 that the magnetocrystalline anisotropy field Hk depends on the thickness of the first intermediate layer.

The magnetocrystalline anisotropy field Hk is calculated based on a Dynamic-Hc value measured by the DC-Erase method. The magnetocrystalline anisotropy field Hk is obviously improved as the thickness of the first intermediate layer 14 (Co₈₀Cr₁₈Ta₂) of the magnetic recording medium 10 is increased beyond 1 nm.

FIG. 6 is a graph of the age-based decay of 350 kFCI reproduction signal of both the magnetic recording medium 10 and the magnetic recording medium 100. FIG. 6 shows that the age-based decay of the magnetic recording medium 10 is less than that of the magnetic recording medium 100 since the magnetic recording medium 10 is more thermally stable than the magnetic recording medium 100.

The magnetic recording medium 10 according to the embodiment is thermally stable enough for practical use even if the tBr of the magnetic layer 16 is less than 7.0 nTm. This thermal stability is achieved since a plurality of intermediate layers is provided and the magnetocrystalline anisotropy field Hk is consequently increased.

FIG. 7 is a graph of the isolated pulse signal to media noise ratio (Siso/Nm) of the magnetic recording medium 10, as a function of the thickness of the first intermediate layer 14. It is obvious from FIG. 7 that the Siso/Nm depends on the first layer thickness. If the thickness of the first intermediate layer is set at 1-5 nm, the Siso/Nm exceeds a desired value, 25 dB, for example.

FIG. 8 is a graph showing the functional relationship between Siso/Nm and the thickness of the second intermediate layer 15 of the magnetic recording medium 10. The thickness of the first intermediate layer 14 is assumed to be 1 nm. The functional relationship between Siso/Nm and the thickness of the intermediate layer 104 of the magnetic recording medium 100 showed in FIG. 3, which is not an embodiment of the present invention, is showed in FIG. 8 for comparison.

One may understand, by reference to FIG. 8, that Siso/Nm decreases as the thickness of the second intermediate layer 15 increases and, when the thickness of the second intermediate layer 15 is 1-5 nm, Siso/Nm exceeds 25 dB, which is desirable.

FIG. 9 is a graph of the ratio S/Nm of a reproduction signal to media noise of the magnetic recording medium 10, measured by recording and reproducing data at a speed of 200 kFCI, as a function of a saturation magnetic flux density Bs. The saturation magnetic flux density Bs can be controlled by changing composition of the first intermediate layer 14.

FIG. 9 shows that, in the case wherein a signal of 200 kFCI is recorded to and reproduced from the magnetic recording medium 10, S/Nm depends on the saturation magnetic flux Bs of the first intermediate layer 14. The saturation magnetic flux density Bs of the first intermediate layer 14 was measured with a VSM method at room temperature using a sample in which each intermediate layer material formed a 15 nm-thick single layer on the Cr underlayer.

FIG. 9 further shows that the best S/Nm is obtained at a saturation magnetic flux density Bs of about 0.6 T. If an S/Nm of 21 dB or more is desired, the saturation magnetic flux density Bs of the first intermediate layer needs to be controlled between 0.4 T and 0.9 T.

FIG. 10 is a graph of the saturation magnetic flux density Bs as a function of a Cr density in the first intermediate layer 14. FIG. 10 shows that, in the case that the first intermediate layer 14 is made of a CoCr-based dual alloy, if the saturation magnetic flux density Bs is desired to be maintained within a range of 0.4-0.9 T, the Cr density can be controlled within a range of 7-28 at %.

In this embodiment of the magnetic recording medium 10, the second intermediate layer 15 over the first intermediate layer 14 weakens the ferromagnetic interaction (exchange interaction) between the first intermediate layer 14 and the magnetic layer 16. Accordingly, the saturation magnetic flux density Bs of the second intermediate layer is desired to be lower than that of the first intermediate layer. As a result, the second intermediate layer having a saturation magnetic flux density Bs of 0-0.4 T is required to manufacture the magnetic recording medium 10 which satisfies some desirable conditions of magnetic recording media, i.e., a good in-plane orientation, a high magnetocrystalline anisotropy field Hk, a high thermal stability, and a high S/Nm.

In the case that the second intermediate layer is made of a CoCr-based dual alloy, for example, it is known by reference to FIG. 10 that the Cr density is preferably within a range of 29-45 at % to obtain the saturation magnetic flux density Bs of 0-0.4 T.

This first embodiment of the present invention is an example having two intermediate layers 14 and 15, but a magnetic recording medium having three or more intermediate layers is also a variation or a modification of the present invention. It is desired that intermediate layers laid on the first intermediate layer have less saturation magnetic flux density Bs than the first intermediate layer does. A magnetic recording medium having three or more intermediate layers which has a good in-plane orientation, a high magnetocrystalline anisotropy field Hk, a high thermal stability, and a high S/Nm can be manufactured by setting the saturation magnetic flux density Bs of the second intermediate layer or each additional intermediate layer formed after the second intermediate layer at 0-0.4 T.

FIG. 11 is a graph of the isolated pulse signal to media noise ratio (Siso/Nm) of the magnetic recording medium 10, as a function of the Cr density in the magnetic layer 16. It is obvious from FIG. 11 that the Siso/Nm of the magnetic recording medium 10 depends on the Cr density of the magnetic layer 16.

FIG. 11 shows that the media noise of the magnetic recording medium 10 is reduced as a Cr density in the magnetic layer 16 is increased. A desired Siso/Nm of 25 dB, for example, is obtained on condition that the Cr density of the magnetic layer 16 is 17 at % or more.

FIG. 12 is a graph of a saturation magnetic flux density Bs of the magnetic layer 16 as a function of a Cr density in the magnetic layer 16. FIG. 12 shows an obvious dependency of the saturation magnetic flux density Bs on the Cr density. The saturation magnetic flux density Bs drops as the Cr density in the magnetic layer 16 increases. FIG. 12 shows that the Cr density is preferably below 27 at % to obtain a practical saturation magnetic flux density Bs of 0.25 T or more.

Accordingly, the preferable range of the Cr density in the magnetic layer 16 is 17≦Cr≦27 at % and more preferably, 20≦Cr≦26 at %.

FIG. 13 is a graph of a coercive force Hc of the magnetic layer 16 as a function of a Pt density in the magnetic field. The magnetic layer 16 is made of Co_(α)Cr₂₄Pt_(β)B₆, where α=(100−(24+6+β)) (at %). FIG. 13 shows an obvious dependency of the coercive force Hc of the magnetic layer 16 on the Pt density. The coercive force Hc increases linearly as the Pt density increases up to 12 at %.

FIG. 13 shows that, if the coercive force of Hc=2000 (×4/π kA/m) is desired, the Pt density is preferred to be 6 at % or more. On the other hand, the phase diagram (not shown) of a Co—Pt dual alloy indicates that the Pt density of 20 at % or less is required in order to obtain the εCo (hcp) phase. Therefore, the Pt density of the magnetic layer 16 is preferably within a range of 6≦Pt≦20 at % to obtain a high coercive force Hc of a ferromagnetic phase.

FIG. 14 is a graph of the coercive force Hc of the magnetic layer 16 as a function of boron (B) density in the magnetic layer 16. FIG. 14 shows that, if the B density is approximately 1≦B≦7 at %, the coercive force Hc of the magnetic layer 16 exceeds 2000 (×4/π kA/m).

As a related matter, it is preferable to reduce the misfit between the lattice of the magnetic layer having a relatively high Pt density (6≦Pt≦20 at %) and the lattice of the underlayer made of Cr. To achieve this object, it is advisable to add 1 at % or more of at least one of molybdenum Mo, tantalum Ta, titanium Ti, tungsten W, and vanadium V, to the underlayer, of which the principal element is Cr, of the magnetic recording medium 10 relative to this embodiment. This additional ingredient makes the in-plane orientation stronger.

Further, the magnetic recording medium 10 relative to this embodiment, including a textured substrate 11 laminated with two underlayers 12 and 13, the first Cr-based underlayer and the second CrMo-based underlayer, has a higher orientation ratio (O.R.), the ratio of saturation squareness along the disk circumferential direction to that along the radial direction, as well as strong in-plane orientation. FIG. 15 shows the improvement in the orientation ratio.

FIG. 15 shows how, in the case of the magnetic recording medium 10 according to the embodiment wherein two underlayers are formed by Cr₈₀Mo₂₀ (4 nm) and Cr, respectively, the orientation ratio (O.R.) depends on the total thickness of underlayers, compared to the case wherein a single underlayer is formed by Cr and the case wherein a single underlayer is formed by Cr₈₀Mo₂₀. The graph shows that, in the case of two underlayers of Cr₈₀Mo₂₀/Cr, respectively, the orientation ratio (O.R.) is improved in comparison with the case of one underlayer formed by Cr₈₀Mo₂₀. One can confirm by measuring the coercive force Hc in the direction perpendicular to the film and a direction in the plane of the film, that if the bottom underlayer is formed by Cr and the top underlayer is formed by a CrMo alloy, the magnetic recording medium has better in-plane orientation

The O.R. is considered to be caused by the difference in the distortion of underlayer lattice between in the circumferential direction and in the radial direction. Actually, since the difference in the underlayer lattice distortion between in the circumferential direction and in the radial direction of a Cr-based alloy is higher than that of a CrMo-based alloy, the O.R. of the Cr-based alloy is higher. The magnetic recording medium 10 relative to this embodiment includes two underlayers, the Cr underlayer 12 on the substrate and the CrMo underlayer 13 on the Cr underlayer, in order to increase both O.R. and in-plane orientation by using the pure Cr underlayer and the CrMo underlayer, respectively. It is confirmed that the S/Nm depends on the temperature of the sputtering chamber, and by conducting the sputtering at the temperature of 170-300° C., a high S/Nm is obtained.

The second embodiment of the present invention will be described next. This second embodiment is a magnetic recording medium having a plurality of intermediate layers related to the first embodiment. In the first embodiment, the second intermediate layer is made of CoCr. The second intermediate layer of this embodiment is made of CoCr—M. This “M” represents at least one element selected out of Mn, Re, and Mo. The structure of the magnetic recording medium according to this embodiment is similar to that of the magnetic recording medium according to the first embodiment showed in FIG. 2. Accordingly, in the description of the magnetic recording medium 30 according to this embodiment, the portion that is equivalent to the portion of the magnetic recording medium in FIG. 2 is referred to by the same numerals and its description will be omitted. What is different will be mainly described below.

FIG. 16 is a schematic illustration of the lamination structure of a magnetic recording medium 30 according to the second embodiment. The magnetic recording medium 30 includes an Al substrate 11 coated with an electroless plated NiP film, its surface being textured by texture processing. The magnetic recording medium 30 further includes a Cr underlayer 12, a CrMo underlayer 13, a CoCrTa first intermediate layer 14, a CoCrMn second intermediate layer 35, a CoCrPtB magnetic layer 16, and a carbon-based overcoat 17, all laminated on the substrate 11 in that order.

The magnetic recording medium 30 according to this embodiment is manufactured by laminating each layer in order using the sputtering method. Before laminating the Cr underlayer 12, for example, the air in the sputtering chamber is exhausted below 1.0×10⁻⁵ Pa, and the substrate 11 is heated up to about 210° C. After the heating, Ar gas is injected to maintain the pressure in the sputtering chamber at about 0.67 Pa. Then, the Cr underlayer (5 nm), the CrMo underlayer (2 nm), the CoCrTa intermediate layer (2 nm), the CoCrMn intermediate layer (2 nm), the CoCrPtB magnetic layer (15 nm), and the carbon-based protective layer (5 nm) are formed in that order on the nonmagnetic NiP—Al substrate.

FIG. 17 shows the dependency of isolated pulse signal to media noise ratio (Siso/Nm) on the thickness of the first intermediate layer 14, which is made of CoCr₁₈Ta₂, in the case wherein the second intermediate layer 35 is a 2 nm thick CoCr₂₅Mn₅ layer. FIG. 17 shows that, when the CoCrTa first intermediate layer 14 is 1-5 nm thick, Siso/Nm exceeds 25 dB, which is preferable.

In FIG. 17, if the thickness of CoCr₁₈Ta₂ is zero, that is, the first intermediate layer 14 does not exist, Siso/Nm is considerably reduced. In this case, the structure is the same as the conventional one in which only the second intermediate layer 35 is formed.

FIG. 18 shows, in contrast to FIG. 17, the dependency of signal to total noise ratio (S/Nt) on the thickness of the CoCr₂₅Mn₅ second intermediate layer, in the case such that the thickness of the CoCr₁₈Ta₂ first intermediate layer 14 is fixed at 1 nm. FIG. 18 shows, when the CoCr₂₅Mn₅ second intermediate layer 35 is 1-5 nm thick, S/Nt is improved and becomes 17.0 dB or more, which is desirable.

In addition, if the thickness of the CoCr₂₅Mn₅ second intermediate layer is zero, that is, there is no second intermediate layer, S/Nt is lowered considerably. In this case, only the first intermediate layer is provided in the magnetic recording medium.

FIG. 19 shows the relationship between signal to media noise ratio S/Nm and saturation magnetic flux density Bs of the first intermediate layer 14, in the case wherein the composition of the first intermediate layer 14 according to this embodiment is changed and a signal of 200 kFCI is recorded/reproduced. The relationship showed in FIG. 19 is substantially identical to that showed in FIG. 9 in the case of the first embodiment. In addition, in this embodiment, the saturation magnetic flux density Bs of each intermediate layer was measured by a VSM method at room temperature using a sample comprising a 15 nm thick layer of each intermediate layer material on a Cr underlayer. One can be sure that, when the saturation magnetic flux density Bs of the material forming the first intermediate layer 14 is 0.6 T, the S/Nm hits the maximum value. Since S/Nm of 21 dB or more is desired, the saturation magnetic flux density Bs of the magnetic material forming the first intermediate layer 14 is preferred to be 0.4-0.9 T.

For example, one can be sure by reference to FIG. 20 that, in the case such that a Co—Cr dual alloy is used for the first intermediate layer 14, Bs falls within the range of 0.4-0.9 T when the Cr density is 7-28 at %. FIG. 20 is substantially identical to FIG. 10 according to the first embodiment.

As described above, intermediate layers formed above the first intermediate layer 14 weaken the ferromagnetic interaction (exchange interaction) between the first intermediate layer 14 and the magnetic layer. That is the reason why Bs of the material of the intermediate layers above the first intermediate layer is preferred to be lower than Bs of the first intermediate layer. When Bs of the material of the intermediate layers above the first is 0-0.4 T, the magnetic recording medium has preferable in-plane orientation, high magnetocrystalline anisotropy field Hk, high thermal stability, and high signal to media noise.

By the way, the second intermediate layer 35 according to this embodiment further contains element M (Mn, Re, Mo). The present inventors have confirmed that Bs of the second intermediate layer 35 depends on (Y+Z) wherein “Y” (at %) means the density of Cr and “Z” (at %) means the density of “M”.

Therefore, by reference to FIG. 20, one may know that, if the preferable range of Bs is 0-0.4 T, the density of (Cr+Mn) is required to be about 29-45 at %. The present inventors further confirmed that, when Mn is replaced with Mo or Re, a similar effect is obtained.

Additionally, in order to reduce the misfit between the crystalline structure of the magnetic layer containing Pt at a relatively high density (6≦Pt≦20 at %) and the crystalline structure of the Cr underlayer, it is desirable that the Cr-based underlayer contains at least one of molybdenum, tantalum, titanium, tungsten, and vanadium, by 1 at % or more. One can thereby improve the in-plane orientation of the magnetic recording medium.

Furthermore, when two underlayers are formed on a textured substrate, the bottom one being made of Cr and the top one being made of CrMo, one can improve the orientation ratio (O.R.) as well as the in-plane orientation.

The dependency of O.R. on the total thickness of all the underlayers of the magnetic recording medium 30 according to this embodiment is substantially identical to that of the magnetic recording medium 10 according to the first embodiment, in which two underlayers are formed, showed in FIG. 15.

The third embodiment of the present invention will now be described.

The magnetic recording medium relative to the third embodiment includes at least one underlayer made of Cr or a Cr-based alloy on a non-magnetic substrate made of glass or aluminum, for example. It is desired that the magnetic recording medium relative to the second embodiment also includes an intermediate layer made of a Co-based alloy on the underlayer(s). A magnetic layer including Ag is included on the intermediate layer, if any.

The magnetic recording medium is made of a CoCrPtBAg-based alloy, for example, and a composition ratio of Co_((100−a−b−c−d))Cr_(a)Pt_(b)B_(c)Ag_(d) (21≦a+c≦30 at %, 6≦b≦20 at %, 1≦d≦9 at %) is preferable.

Furthermore, the magnetic layer of this embodiment can be made of different magnetic materials, or can include at least two magnetic layers as a complex magnetic layer made of a combination of a CoCrPtB-based alloy and a CoCrPtAg-based alloy, for example.

It is desired that the underlayer be made of a Cr-based alloy including as an ingredient at least one of W, V, or Mo, and have a crystal structure of a body-centered cubic structure (bcc structure).

It is further desirable that the intermediate layer be made of a Co-based alloy including as an ingredient at least one of Cr, Ta, Mo, Mn, Re, and Ru, and have a crystal structure of a hexagonal close-packed structure (hcp structure). The intermediate layer is desired to be 0.5-3.0 nm thick.

The magnetic recording medium relative to the third embodiment realizes both low noise and improved magnetocrystalline anisotropy field.

FIG. 21 is a schematic diagram of the lamination structure of a magnetic recording medium 20 relative to the third embodiment.

A substrate 21 is an aluminum substrate, coated by electroless plating of a NiP film, of which surface is treated mechanically or by laser texture along concentric circles.

The magnetic recording medium 20 of this embodiment can be manufactured through a thin film formation technique using sputtering equipment. More particularly, the DC magnetron sputtering technique is used in this embodiment. The air in a sputtering chamber is exhausted below 4.0×10⁻⁵ Pa and Ar gas is injected into the sputtering chamber up to 0.67 Pa.

The substrate 11 is heated up to above 200° C. before forming a thin film in order to clean up the surface of the substrate 11, control a crystal orientation, and reduce intergranular interaction in the magnetic layer 25. It is preferable to control the temperature of the substrate between 200 and 270° C. because a NiP may crystallize at a substrate temperature over 270° C. In this embodiment, the temperature of the substrate 11 is, before forming the thin film, set at 220° C.

A Cr-based alloy having a larger lattice constant than does pure Cr is used to form an underlayer. Accordingly, a good in-plane orientation is obtained because of improved spacing matching between the magnetic layer 25 and the Cr-based alloy underlayer 23. In this embodiment, a 5 nm-thick Cr layer is formed as the first underlayer 22 and a 2 nm-thick CrMo-based alloy layer is formed as the second underlayer 23.

It is desired that the intermediate layer 24 be made of a Co-based alloy having an hcp structure. The Co-based alloy improves an in-plane crystal orientation of the magnetic layer 25. As the thickness of the intermediate layer 24 increases, the resolution of the magnetic recording medium decreases. Preferred range of the thickness is 0.5-3.0 nm. In this embodiment, the intermediate layer 24 is a 1 nm-thick CoCrTa-based alloy.

The magnetic layer 25 includes at least one layer made of a CoCrPtBAg-based alloy. In this embodiment, the magnetic layer 25 is made of Co_((100−x))Cr₂₂Pt₁₀B₄Ag_(x) (x=1−11).

A coercive force Hc increases as the product tBr of a thickness t and a remanent magnetic flux density Br of the magnetic layer 25 increases, but too large a tBr results in a drop in a record/reproduction resolution and the coercive force Hc. A preferable range of tBr of the magnetic layer 25 is 2.0-10.0 nTm. In this embodiment, tBr of the magnetic layer is set at 6.0 nTm.

An overcoat 26 formed on the magnetic layer 25 is mainly made of carbon (C). The overcoat 26 of this embodiment is a 6 nm-thick carbon film.

FIG. 22 is a graph of an magnetocrystalline anisotropy field Hk measured by the torque-loss method at room temperature as a function of Ag density of the magnetic layer 25 having a composition of Co_((100−x))Cr₂₂Pt₁₀B₄Ag_(x) (x=1−11). FIG. 22 shows the dependency of the magnetocrystalline anisotropy field Hk on the Ag density of the magnetic layer 25.

In case of the magnetic layer 25 of the magnetic recording medium 20 of this embodiment, even though the sum of a Cr density and a B density is 28 at % where media noise is low enough, the magnetocrystalline anisotropy field Hk is improved.

FIG. 23 is a graph of the ratio (S/Nm) of a readout signal of a recording density 351 kFCI to media noise of the magnetic layer 25 having a composition of Co_((100−x))Cr₂₂Pt₁₀B₄Ag_(x) (x=1−11) as a function of Ag density. FIG. 23 shows a dependency of the S/Nm on the Ag density of the magnetic layer 25. The magnetic layer 25 of the magnetic recording medium 20 of this embodiment exhibits the properties of lower noise and higher S/Nm than a conventional magnetic layer made of a CoCrPtB-based alloy.

A description of a magnetic recording device as an embodiment of the present invention will now be given with reference to FIGS. 18 and 19. FIG. 24 is a sectional view showing the main part of a magnetic recording device 120 as an embodiment of the present invention, and FIG. 25 is a plan view showing the main part of the magnetic recording device 120.

As shown in FIG. 24 and FIG. 25, the magnetic recording device is covered by a housing 123. The magnetic recording device 120 includes, in the housing 123, a motor 124, a hub 125, a plurality of magnetic recording media 126, a plurality of recording/reproduction heads 127, a plurality of suspensions 128, a plurality of arms 129, and an actuator unit 121. The magnetic recording media 126 are fixed to the hub 125 rotated by the motor 124. Each recording/reproduction head 127 is a combination type recording/reproduction head of a reproduction head such as an MR Head and a GMR Head, and a recording head such as an inductive head. Each recording/reproduction head 127 is mounted on the point of a corresponding arm 129 through a suspension 128. The arm 129 is driven by the actuator unit 121. A detailed description of the configuration of this magnetic recording device is omitted because the essential structure of this magnetic recording device is publicly known.

The above embodiment of the magnetic recording device 120 is characterized by the magnetic recording medium 126. Each magnetic recording medium 126 is structured as showed in FIGS. 2, 16, or 21. The quantity of the magnetic recording media 126 is not limited to three, and can be one, two, or more than three. The configuration of the magnetic recording device 120 is not limited to those showed in FIGS. 24 and 25. The application of the magnetic recording medium 126 is not limited to hard disks.

FIG. 26 is a schematic diagram showing the internal structure of a hard disk drive (HDD) 211, which is an embodiment of a magnetic recording medium driving apparatus, according to an embodiment of the present invention. The HDD 211 is stored in a box-shaped chassis 212, for example. One or more magnetic disks 213 are provided in the chassis 212. The magnetic disks 213 are fixed on a rotation axis of a spindle motor 214. The spindle motor 214 can rotate the magnetic disk 213 at a rotative speed of 7,200 rpm or 10,000 rpm, for example. The chassis 212 is closed with a cover (not shown).

A head actuator 216 is mounted on a spindle 215 extending vertically. The head actuator 216 is made of a rigid actuator arm 217 extending horizontally from the spindle 215, and an elastic suspension 218 attached at the point of the actuator arm 217 and extending forward from the actuator arm 217. A floating head slider 219 provided at the point of the elastic suspension 218 is supported at one end by means of a so-called gimbal spring (not shown). A force is applied to the floating head slider 219 by the elastic suspension 218 so that the floating head slider 219 is pushed towards the surface of the magnetic disk 213. The rotation of the magnetic disk 213 generates air flow near the surface of the magnetic disk 213, and a floating force is applied to the floating head slider 219 by the air flow. Because the pushing force generated by the elastic suspension 218 and the floating force generated by the air flow are balanced, the floating head slider 219 keeps floating over the surface of the magnetic disk 213 with relatively high rigidity.

A magnetic head (not shown), which may be an electro-magnetic conversion element, is mounted on the floating head slider 219. The electro-magnetic conversion element may be made up with a reading element and a writing element. The reading element may be a Great Magneto Resistance Effect (GMR) element or a Tunnel Junction Magneto Resistance Effect (TMR) element, for example, that reads information written in the magnetic disk 213 using the change in resistance of a spin bulb film and a tunnel junction film, respectively. The writing element is an inductive writing head, for example, that writes information on the magnetic disk 213 using the magnetic field generated by a thin-film coil pattern.

The head actuator 216 rotates around the spindle 215, and as a result, the floating head slider 219 moves across the magnetic disk 213 in a radial direction. The electro-magnetic conversion element mounted on the floating head slider 219 can be positioned at a designated recording track on the magnetic disk 213. The head actuator 216 may be actuated by an actuator 221 such as a voice coil motor (VCM). If multiple magnetic disks 213 are provided in the chassis 212, two actuator arms 217, that is, two floating head sliders 219, may be provided between adjacent magnetic disks 213.

FIG. 27 is a cross section showing the structure of the magnetic disk 213. The magnetic disk 213 is configured as an in-plane magnetic recording medium. The magnetic disk 213 includes a substrate 231 and a polycrystalline-structured film 232 formed on the substrate 231. The substrate 231 may be configured by a disk-shaped Al body 233, and NiP film 234 formed on the Al body 233. The surface of the substrate 231 may be texture-structured. The substrate 231 may be made of glass, silicon, or ceramic, for example. Information is recorded in the polycrystalline-structured film 232. The polycrystalline-structured film 232 is coated with a protective overcoat 235 such as a diamond-like carbon (DLC) film and a lubricating film 236 such as a per-fluoro polyether (PFPR) film.

The polycrystalline-structured film 232 includes a recording magnetic layer 237. The recording magnetic layer 237 is made up with aggregation of adjacent magnetic grains. The recording magnetic layer 237 may be configured by alloys including at least Co, Cr, and Pt. The alloys may further include at least one of B and Ta.

In the following description, an assumption is made that the recording magnetic layer 237 is a CoCrPtB film. The Pt density in the recording magnetic layer 237 may be set at 6-20 [at %]. The saturation magnetic flux density Bs of the recording magnetic layer 237 may be set at 0.1-0.8 [T].

The polycrystalline-structured film 232 includes a third intermediate layer 238, that is, a third alloy layer, which on the surface thereof the recording magnetic layer 237 is formed. The third intermediate layer 238 is made up with an aggregation of adjacent grains. The third intermediate layer 238 may be configured by alloys including at least Co, Cr, and Pt. The alloy may further include at least one of B and Ta. The third intermediate layer 238 can be made up with the same kind of materials with which the recording magnetic layer 237 is configured. In the following description, an assumption is made that the third intermediate layer 238 is a CoCrPtB film, for example. The third intermediate layer 238 includes non-magnetic material at a higher density than the recording magnetic layer 237 does. The third intermediate layer 238 includes Pt at a higher density than the recording magnetic layer 237 does. For example, the third intermediate layer 238 may include Cr at a density of 29 [at %] or more, or in one exemplary embodiment at a density of 29-30 [at %], and Pt at a density of 15 [at %] or more, or in one exemplary embodiment at a density of 15-17 [at %]. The saturation magnetic flux density Bs of the third intermediate layer 238 may be set at 0-0.1 [T]. The saturation magnetic flux density Bs of the third intermediate layer 238 is set at a lower value than that of the recording magnetic layer 237. The thickness of the third intermediate layer 238 may be set at 0.5 nm-5.0 nm, for example.

The third intermediate layer 238 is formed on the surface of a second intermediate layer 239, that is, a second alloy layer. The second intermediate layer 239 is made up with an aggregation of adjacent grains. The second intermediate layer 239 may be configured by alloys including at least Co and Cr. In the following description, an assumption is made that the second intermediate layer 239 is a CoCr film, for example. The second intermediate layer 239 includes Cr at a density of 29 [at %] or more. The saturation magnetic flux density Bs of the second intermediate layer 239 is set at 0-0.4 [T], for example. The thickness of the second intermediate layer 239 may be set at 0.5 nm-5.0 nm, for example.

The second intermediate layer 239 is formed on the surface of a first intermediate layer 241, that is, a first alloy layer. The first intermediate layer 241 is made up with an aggregation of adjacent grains. The first intermediate layer 241 may be configured by alloys including at least Co and Cr. The first intermediate layer 241 may further include at least one of Pt, B, and Ta. In the following description, an assumption is made that the first intermediate layer 241 is a CoCrTa film, for example. The first intermediate layer 241 includes non-magnetic material at a lower density than the density at which the recording magnetic layer 237 does. Similarly, the first intermediate layer 241 may include non-magnetic material at a lower density than the density at which the second intermediate layer 239 does. That is, the first intermediate layer 241 includes Cr of 7-28 [at %] density. The saturation magnetic flux density Bs of the first intermediate layer 241 is set at 0.4-0.9 [T], for example. The thickness of the first intermediate layer 241 is set at 0.5 nm-5.0 nm, for example.

The first intermediate layer 241 is formed on the surface of an underlayer 242. The underlayer 242 is configured by a second underlayer 242 a and a first under layer 242 b. The second underlayer 242 a is made up with a Cr-based alloy layer (second non-magnetic underlayer) and is formed on the surface of the first underlayer 242 b. The first underlayer 242 b is made up with a Cr layer (first non-magnetic underlayer). The second non-magnetic underlayer 242 a may include atoms of at least one selected from a group of Mo, Ta, Ti, W, and V at a density of 1 [at %] or more. The consistency of crystal lattice between the underlayer 242 and the recording magnetic layer 237 can be improved by adding the above atoms. In the following description, an assumption is made that the second non-magnetic underlayer 242 a is a CrMo film. The thickness of the second non-magnetic underlayer 242 a may be set at about 2.0 nm, for example. The first non-magnetic underlayer 242 b is assumed to be a Cr film. The thickness of the first non-magnetic underlayer 242 b may be set at about 4.0 nm, for example.

The underlayer 242 may be formed by a single layer made up with Cr-based alloy. The underlayer 242 may include atoms of at least one selected from a group of Mo, Ta, Ti, W, and V, at a density of 1 [at %] or more, for example. The underlayer 242 may be configured by multiple alloy layers including Cr. The alloy layers may include atoms of at least one selected from a group of Mo, Ta, Ti, W, and V, at a density of 1 [at %] or more, for example. The alloy layer on the surface of which the first intermediate layer 241 is formed preferably includes Cr at a greater density than the density at which an alloy layer formed on the surface of the substrate 231 includes.

The third intermediate layer 238 can be made up with the same kind of material as the recording magnetic layer 237. As a result, the third intermediate layer 238 can be regarded as a part of the recording magnetic layer 237. This results in the thickness of the recording magnetic layer 237 being increased in effect. The increase in the thickness of the recording magnetic layer 237 reduces thermal instability, and prevents the magnetization of the recording magnetic layer 237 from being reduced for a long time period.

Additionally, the first intermediate layer 241 includes less non-magnetic material than the recording magnetic layer 237 does. As a result, the easy axis of magnetization (the direction in which the first intermediate layer 241 is easily magnetized) of the first intermediate layer 241 is made parallel to the surface of the substrate 231. The first intermediate layer 241 can reduce the thermal instability.

On the other hand, the second intermediate layer 239 includes sufficiently greater amount of non-magnetic material compared with the first intermediate layer 241. The saturation magnetic flux density Bs of the second intermediate layer 239 remains low. As a result, the ferromagnetic interaction between the first intermediate layer 241 and the recording magnetic layer 237 is reduced by the second intermediate layer 239. It is possible to substantially inhibit or prevent the magnetic anisotropy of the recording magnetic layer 237 from being reduced.

A method of manufacturing the magnetic disk 213 is described below. The disk-shaped substrate 231 is prepared. The surface of the substrate 231 is textured. A NiP film 234 is formed on the surface of the substrate 231. The NiP film 234 may be formed by electroless plating, for example. The substrate 231 is set in a spattering apparatus, for example. A polycrystalline structured film 232 is formed on the surface of the NiP film 234. The forming of the polycrystalline structured film 232 is described in detail below. Then, a protective film 235 of thickness of about 5 nm is formed on the surface of the polycrystalline structured film 232. For example, CVD method (Chemical Vapor Deposition method) is used for the forming of the protective film 235. A lubricating film 236 of thickness of about 1.0 nm is painted on the surface of the protective film 235. The substrate 231 is dipped into solution including per-fluoro-polyether, for example, for painting the lubricating film 236.

The polycrystalline structured film 232 is formed in the sputtering apparatus using DC magnetron sputtering method, for example. Before the polycrystalline structured film 232 is formed, the air in the chamber of the sputtering apparatus is removed to a pressure of 1.0×10⁻⁵ [Pa], and Ar gas is introduced into the chamber. The pressure in the chamber is maintained at about 0.67 [Pa]. The substrate 231 is heated up to 160-300° C. In the following description, the substrate 231 is preferably heated to about 240° C., for example.

As shown in FIG. 28, the first non-magnetic underlayer 242 b is formed on the surface of the substrate 231. A Cr target is used for the forming of the first non-magnetic underlayer 242 b. Cr atoms deposit and form grains on the surface of the substrate 231. While the substrate 231 is kept at a high temperature, the 4.0 nm thick first non-magnetic underlayer 242 b is formed.

As shown in FIG. 29, the second non-magnetic underlayer 242 a is formed on the surface of the first non-magnetic underlayer 242 b. A CrMo target is used for the forming of the second non-magnetic underlayer 242 a. The CrMo target includes Mo of a predetermined density. The CrMo target preferably includes Mo of a density of 1 [at %] or more, for example. Cr atoms and Mo atoms deposit on the surface of the Cr film. As a result, the second non-magnetic underlayer 242 a of a thickness of 2.0 nm, for example, is formed on the surface of the first non-magnetic underlayer 242 b. The second non-magnetic underlayer 242 a is formed by epitaxial growth on the grains of the first non-magnetic underlayer 242 b.

In addition, as shown in FIG. 30, the first intermediate layer 241 is formed on the surface of the second non-magnetic underlayer 242 a. A CoCrTa target is used for the forming of the first intermediate layer 241. The CoCrTa target preferably includes Cr of a density of 7-28 [at %]. As a result, the first intermediate layer 241 of a thickness of 2.0 nm is formed on the surface of the second non-magnetic underlayer 242 a. The first intermediate layer 241 is formed by the epitaxial growth on the grains of the second non-magnetic underlayer 242 a. The saturation magnetic flux density Bs of the first intermediate layer 241 is preferably 0.4-0.9 [T].

In addition, as shown in FIG. 31, the second intermediate layer 239 is formed on the surface of the first intermediate layer 241. A CoCr target is used for the forming of the second intermediate layer 239. The CoCr target preferably includes Cr of a density of 29 [at %] or more. As a result, the second intermediate layer 239 of a thickness of 1.5 nm is formed on the surface of the first intermediate layer 241. The second intermediate layer 239 is formed by epitaxial growth on the grains of the first intermediate layer 241. The saturation magnetic flux density Bs of the second intermediate layer 239 is preferably within a range of 0-0.4 [T].

In addition, as shown in FIG. 32, the third intermediate layer 238 is formed on the surface of the second intermediate layer 239. A CoCrPtB target is used for forming the third intermediate layer 238. The CoCrPtB target preferably includes Cr of a density of 29 [at %] or more and Pt of a density of 15 [at %] or more. The thickness of the third intermediate layer 238 formed on the surface of the second intermediate layer 239 is about 2.0 nm. The third intermediate layer 238 is formed by epitaxial growth on the grains of the second intermediate layer 239. The saturation magnetic flux density Bs of the third intermediate layer 238 is preferably within a range of 0-0.1 [T].

In addition, as shown in FIG. 33, the recording magnetic layer 237 is formed on the third intermediate layer 238. A CoCrPtB target used for forming the recording magnetic layer 237 includes Cr and Pt of smaller densities [at %] than the CoCrPtB target used for forming the third intermediate layer 238. The CoCrPtB target preferably includes Pt of a density within 6-20 [at %]. The recording magnetic layer 237 formed on the surface of the third intermediate layer 238 is about 2.0 nm thick. The recording magnetic layer 237 is formed by the epitaxial growth on the grains of the third intermediate layer 238. Cr diffuses into the recording magnetic layer 237 from the second intermediate layer 239 and the third intermediate layer 238. The saturation magnetic flux density Bs of the recording magnetic layer 237 is preferably within a range of 0.1-0.8 [T].

The inventors measured the decrement of the signal output reproduced from the magnetic disk 213. Three samples were manufactured using the above method.

A first sample had a 0.5 nm thick third intermediate layer 238. A second sample had a 1.0 nm thick third intermediate layer 238. A third sample had a 2.0 nm thick third intermediate layer 238. The third intermediate layer 238 included 29 [at %] Cr, 17 [at %] Pt, and 2 [at %] B. Similarly, the inventors prepared a comparison sample. The comparison sample did not have the third intermediate layer.

The samples (including the comparison sample) had a 1.5 nm thick second intermediate layer 239. The second intermediate layer 239 included 42 [at %] Cr. Information was recorded at a linear recording density of 400 [kFCI]. Reproduction output was measured at predetermined intervals. FIG. 34 shows the S/Nt decrement [%] that was computed as described above. As shown in FIG. 34, the first, second, and third samples showed preferable S/Nt decrement compared with the comparison sample. It was observed that the third intermediate layer 238 considerably inhibits or prevents the magnetization of the recording magnetic layer 237 from being degraded.

The inventors measured the S/N ratio of an isolated wave of the magnetic disk 213. Multiple pieces of a fourth sample were manufactured using the above method. 29 [at %] Cr, 17 [at %] Pt, and 2 [at %] B were added to the third intermediate layer 238. The inventors prepared another comparison sample. The comparison sample did not have the third intermediate layer. The second intermediate layer 239 of the samples (including the comparison sample) was 1.5 nm thick. 42 [at %] Cr was added to the second intermediate layer 239. Information was written using an isolated wave, and the S/N ratio was computed. As a result, and as shown in FIG. 35, it was observed that if the third intermediate layer 238 was 3.5 nm thick or less, the isolated wave S/N ratio of the fourth sample was better than that of the comparison sample. Especially, if the third intermediate layer 238 was set within a range of 0.5-2.0 nm, the isolated wave S/N ratio became especially preferable.

Next, the inventors measured the reproduction output resolution of the magnetic disk 213. Multiple pieces of fifth samples were manufactured using the method described above. The fifth samples had third intermediate layers 238 of different thickness of 4.0 nm or less. 29 [at %] Cr, 17 [at %] Pt, and 2 [at %] B were added to the third intermediate layers 238. The inventors prepared comparison samples in the same manner. The comparison samples did not have the third intermediate layer. The samples (including the comparison samples) had a 1.5 nm thick second intermediate layer 239. 42 [at %] Cr was added to the second intermediate layer 239. Information was recorded at a linear recording density of 385 [kFCI]. The reproduction output resolution was computed based on the written information. As a result, and as shown in FIG. 36, it was observed that, if the thickness of the third intermediate layer was within the range equal to or less than 4.0 nm, the reproduction output resolutions of the fifth samples were improved compared with those of the comparison samples. Especially, if the thickness of the third intermediate layer 238 was within the range of 2.0-3.5 nm, the reproduction output resolution was considerably improved.

The inventors also examined the relation between the reproduction output resolution and the saturation magnetic flux density Bs of the third intermediate layer 238. Sixth samples and seventh samples were manufactured using the above method of manufacturing. 29 [at %] Cr was added to the third intermediate layer 238 of the sixth samples. 30 [at %] Cr was added to the third intermediate layer 238 of the seventh samples. The saturation magnetic flux density Bs of the third intermediate layer 238 of the sixth samples was different from that of the seventh samples. Information was recorded at a linear recording density of 385 [kFCI]. The reproduction output resolution was computed based on the written information. As a result, and as shown in FIG. 37, the smaller the saturation magnetic flux density Bs of the third intermediate layer 238 was set, the more the reproduction output resolution was improved.

The inventors also examined the relation between the saturation magnetic flux density Bs of the third intermediate layer 238 and the density [at %] of Pt. Eighth, ninth, and tenth samples were prepared. A single 50 nm thick CoCrPtB film was formed on the underlayer 242. The CoCrPtB film of the eighth sample included Cr of a density of 28 [at %]. The CoCrPtB film of the ninth sample included Cr of a density of 29 [at %]. The CoCrPtB film of the eighth sample included Cr of a density of 30 [at %]. However, all samples included B of a density of 2 [at %]. Each sample included Pt of a different density within a range of 15-17 [at %].

The saturation magnetic flux density Bs was measured at a room temperature using a VSM (Vibrated Sample Magnetometer). As a result of the measurement, and as shown in FIG. 38, it was observed that, as the Cr density in the CoCrPtB film was increased, the saturation magnetic flux density Bs was reduced. On the other hand, it was also observed that, as the Pt density was increased, the saturation magnetic flux density Bs was reduced. Additionally, if the CoCrPtB film included 29 [at %] or more Cr and 15 [at %] or more Pt, the saturation magnetic flux density Bs of the CoCrPtB became 0.1 [T] or less.

The present invention is not limited to these embodiments, but various variations and modifications may be made without departing from the scope of the present invention.

This patent application is based on Japanese priority patent applications No. 2001-198538 filed on Jun. 29, 2001, No. 2002-121273 filed on Apr. 23, 2002, and No. 2003-131207 filed on May 9, 2003, the entire contents of which are hereby incorporated by reference. 

1. A magnetic recording medium, comprising: a substrate; an underlayer on said substrate; a first intermediate layer on said underlayer; a second intermediate layer on said first intermediate layer; a third intermediate layer on said second intermediate layer; and a recording layer on said third intermediate layer, wherein said first intermediate layer is made of a cobalt based alloy containing chromium equal to or greater than about 7 at % and equal to or smaller than about 28 at %; and said second intermediate layer is made of a cobalt based alloy containing chromium equal to or greater than about 29 at %; said third intermediate layer is made of a cobalt based alloy containing chromium equal to or greater than about 29 at %; and said recording layer includes a cobalt based alloy; wherein said third intermediate layer contains non-magnetic material and said recording layer contains non-magnetic material, and the non-magnetic material contained in said third intermediate layer is of a greater density than that contained in said recording layer.
 2. The magnetic recording medium as claimed in claim 1, wherein the cobalt based alloy of which said third intermediate layer is made further includes platinum equal to or greater than about 15 at %.
 3. The magnetic recording medium as claimed in claim 1, wherein said third intermediate layer contains platinum and said recording layer contains platinum, and the platinum contained in said third intermediate layer is of a greater density than that contained in said recording layer.
 4. The magnetic recording medium as claimed in claim 1, wherein said third intermediate layer has a saturation magnetic flux density set in a range of 0-0.1 T.
 5. The magnetic recording medium as claimed in claim 1, wherein said first intermediate layer contains non-magnetic material and said recording layer contains non-magnetic material, and the non-magnetic material contained in said first intermediate layer is of a smaller density than that contained in said recording layer.
 6. The magnetic recording medium as claimed in claim 1, wherein said first intermediate layer has a saturation magnetic flux density set in a range of 0.4-0.9 T.
 7. The magnetic recording medium as claimed in claim 1, wherein said second intermediate layer contains non-magnetic material and said first intermediate layer contains non-magnetic material, and the non-magnetic material contained in said second intermediate layer is at a greater density than that contained in said first intermediate layer.
 8. The magnetic recording medium as claimed in claim 1, wherein said recording layer further contains boron.
 9. The magnetic recording medium as claimed in claim 1, wherein said third intermediate layer further contains boron.
 10. The magnetic recording medium as claimed in claim 1, wherein said first intermediate layer contains tantalum.
 11. The magnetic recording medium as claimed in claim 1, wherein the underlayer includes chromium; and the underlayer includes atoms of at least one selected from a group of molybdenum, tantalum, titanium, tungsten, and vanadium.
 12. The magnetic recording medium as claimed in claim 1, wherein the underlayer comprises a first underlayer and a second underlayer; the second underlayer including chromium, said first intermediate layer being formed on said second underlayer; and the first underlayer including chromium, said second underlayer being formed on said first underlayer; the second underlayer includes atoms of at least one selected from a group of molybdenum, tantalum, titanium, tungsten, and vanadium. 